preliminary solid state devices, inc. SFF120-28Q features: data sheet #: f00225b maximum ratings ? rugged construction with poly silicon gate ? low rds (on) and high transconductance ? excellent high temperature stability ? very fast switching speed ? fast recovery and superior dv/dt performance ? increased reverse energy capability ? low input and transfer capacitance for easy paralleling ? hermetically sealed surface mount package ? tx, txv and space level screening available ? replaces 4x irf120 types in one package 28 pin clcc 9.2 amps 100 volts 0.35 s quad n-channel power mosfet designer's data sheet 14005 stage road * santa fe springs, ca 90670 phone: (562) 404-4474 * fax: (562) 404-1773 note: all specifications are subject to change without notification. scds for these devices should be reviewed by ssdi prior to release. package outline: 28 pin clcc pin out: mosfet 1 drain: 5, 6, 7 gate: 1 source: 2, 3, 4 mosfet 2 drain: 9, 10, 11 gate: 8 source: 12, 13, 14 mosfet 3 drain: 19, 20, 21 gate: 1 5 source: 16, 17, 18 mosfet 4 drain: 23, 24, 25 gate: 2 2 source: 26, 27, 28 (3 places) v gs 20 volts gate to source voltage i d 9.2 continuous drain current drain to source voltage v ds 100 amps volts thermal resistance, junction to case (all four) r 2 jc t op & t stg -55 to +150 operating and storage temperature o c o c/w 10 characteristic symbol value unit watts total device dissipation p d 12.5 9.5 @ tc = 25 o c @ tc = 70 o c note: all drain/source pins must be connected on the pc board in order to maximize current carrying capability and to minimize rds (on)
solid state devices, inc. SFF120-28Q preliminary 14005 stage road * santa fe springs, ca 90670 phone: (562) 404-4474 * fax: (562) 404-1773 electrical characteristics @ t j =25 o c (unless otherwise specified) v drain to source breakdown voltage (vgs =0 v, id =250 : a) - bv dss - rating symbol min typ max unit 100 s drain to source on state resistance (vgs = 10 v, 60% of rated id) - r ds(on) 0.35 - v gate threshold voltage (vds =vgs, id =250 : a) - v gs(th) 4.0 2.0 s( ) forward transconductance (vds > id(on) x rds (on) max, ids =60% rated id) 4.1 gf s - 2.7 : a zero gate voltage drain current (v ds = max rated voltage, v gs = 0v) (v ds = 80% rated v ds , v gs = 0v, t a = 125 o c) - - i dss - - gate to source leakage forward gate to source leakage reverse - - i gss +100 -100 - - at rated vgs total gate charge gate to source charge gate to drain charge vgs = 10 v 80% rated vds 60% rated id qg qgs qgd - - - 10.7 2.9 5.1 16 4.4 7.7 nsec turn on delay time rise time turn off delay time fall time vdd =50% rated vds 50% rated id rg = 18 s t d (on) tr t d (off) tf - - - - 13 30 19 20 20 45 29 30 v - v sd 2.5 - diode reverse recovery time reverse recovery charge 140 0.65 t rr q rr 260 1.3 55 0.25 tj =25 o c if = rated id di/dt = 100a/ : sec input capacitance output capacitance reverse transfer capacitance vgs =0 volts vds =25 volts f =1 mhz ciss coss crss - - - 350 130 36 - - - pf nsec : c for thermal derating curves and other characteristic curves please contact ssdi marketing department. a on state drain current (vds > id(on) x rds(on) max, vgs = 10 v) - i d(on) - 9.2 diode forvard voltage (i s = rated i d , v gs = 0v, t j = 25 o c) nc na 25 250 notes:
|
